Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry
Type
ArticleKAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabFunctional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2012-02-01Online Publication Date
2012-02-01Print Publication Date
2012-01-30Permanent link to this record
http://hdl.handle.net/10754/552733
Metadata
Show full item recordAbstract
The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.Citation
Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry 2012, 100 (5):052110 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.3678186