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dc.contributor.authorWu, Xing
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorBosman, Michel
dc.contributor.authorRaghavan, Nagarajan
dc.contributor.authorMigas, Dmitri B.
dc.contributor.authorBorisenko, Victor E.
dc.contributor.authorZhang, Xixiang
dc.contributor.authorLi, Kun
dc.contributor.authorPey, Kin-Leong
dc.date.accessioned2015-05-10T14:28:07Z
dc.date.available2015-05-10T14:28:07Z
dc.date.issued2013-03-15
dc.identifier.citationIntrinsic nanofilamentation in resistive switching 2013, 113 (11):114503 Journal of Applied Physics
dc.identifier.issn00218979
dc.identifier.doi10.1063/1.4794519
dc.identifier.urihttp://hdl.handle.net/10754/552547
dc.description.abstractResistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/113/11/10.1063/1.4794519
dc.rightsArchived with thanks to Journal of Applied Physics
dc.titleIntrinsic nanofilamentation in resistive switching
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.identifier.journalJournal of Applied Physics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionSingapore University of Technology and Design (SUTD), Singapore 138682
dc.contributor.institutionSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
dc.contributor.institutionInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research, 3 Research Link, Singapore 117602
dc.contributor.institutionDivision of Microelectronics, School of Electrical and Electronics Engineering, Nanyang Technological University (NTU), Singapore 639798
dc.contributor.institutionBelarusian State University of Informatics and Radioelectronics, P.Browka 6, Minsk 220013, Belarus
kaust.personCha, Dong Kyu
kaust.personZhang, Xixiang
kaust.personLi, Kun
refterms.dateFOA2018-06-14T04:32:57Z


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