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dc.contributor.authorXiao, Zhen-Yu
dc.contributor.authorLi, Yong-Feng
dc.contributor.authorYao, Bin
dc.contributor.authorDeng, Rui
dc.contributor.authorDing, Zhan-Hui
dc.contributor.authorWu, Tao
dc.contributor.authorYang, Gang
dc.contributor.authorLi, Chun-Ran
dc.contributor.authorDong, Zi-Yuan
dc.contributor.authorLiu, Lei
dc.contributor.authorZhang, Li-Gong
dc.contributor.authorZhao, Hai-Feng
dc.date.accessioned2015-05-10T14:24:19Z
dc.date.available2015-05-10T14:24:19Z
dc.date.issued2013-11-11
dc.identifier.citationBandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study 2013, 114 (18):183506 Journal of Applied Physics
dc.identifier.issn00218979
dc.identifier.doi10.1063/1.4829457
dc.identifier.urihttp://hdl.handle.net/10754/552546
dc.description.abstractWe report on bandgap engineering of an emerging photovoltaic material of Cu2CdxZn1-xSnS4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption measurements indicate that the bandgap of the kesterite CCZTS alloy can be continuously tuned in a range of 1.55-1.09 eV as Cd content varied from x = 0 to 1. Hall effect measurements suggest that the hole concentration of CCZTS films decreases with increasing Cd content. The CCZTS-based solar cell with x = 0.47 demonstrates a power conversion efficiency of 1.2%. Our first-principles calculations based on the hybrid functional method demonstrate that the bandgap of the kesterite CCZTS alloy decreases monotonically with increasing Cd content, supporting the experimental results. Furthermore, Cu2ZnSnS4/Cu 2CdSnS4 interface has a type-I band-alignment with a small valence-band offset, explaining the narrowing of the bandgap of CCZTS as the Cd content increases. Our results suggest that CCZTS alloy is a potentially suitable material to fabricate high-efficiency multi-junction tandem solar cells with different bandgap-tailored absorption layers. © 2013 AIP Publishing LLC.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/114/18/10.1063/1.4829457
dc.rightsArchived with thanks to Journal of Applied Physics
dc.titleBandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Applied Physics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
dc.contributor.institutionState Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, China
dc.contributor.institutionSchool of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
dc.contributor.institutionState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No.3888 Dongnanhu Road, Changchun 130033, China
kaust.personWu, Tao
refterms.dateFOA2018-06-14T07:41:29Z
dc.date.published-online2013-11-11
dc.date.published-print2013-11-14


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