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dc.contributor.authorRojas, Jhonathan Prieto
dc.contributor.authorSevilla, Galo T.
dc.contributor.authorAlfaraj, Nasir
dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorKutbee, Arwa T.
dc.contributor.authorSridharan, Ashvitha
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-05-05T14:48:14Z
dc.date.available2015-05-05T14:48:14Z
dc.date.issued2015-05-05
dc.identifier.citationNon-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing 2015:150501111031008 ACS Nano
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.pmid25933370
dc.identifier.doi10.1021/acsnano.5b00686
dc.identifier.urihttp://hdl.handle.net/10754/552326
dc.description.abstractThe ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stack, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length exhibits ION ~70 μA/μm (VDS = 2 V, VGS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.5b00686
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b00686.
dc.subjectDouble-transfer
dc.subjectSoft material
dc.subjectnon-planar
dc.subjectFinFETs
dc.subjectAsymmetric surface
dc.titleNon-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentThe KAUST School
dc.identifier.journalACS Nano
dc.eprint.versionPost-print
kaust.personRojas, Jhonathan Prieto
kaust.personSevilla, Galo T.
kaust.personAlfaraj, Nasir
kaust.personGhoneim, Mohamed T.
kaust.personKutbee, Arwa T.
kaust.personHussain, Muhammad Mustafa
kaust.personSridharan, Ashvitha
refterms.dateFOA2016-05-01T00:00:00Z
dc.date.published-online2015-05-05
dc.date.published-print2015-05-26


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