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dc.contributor.authorRojas, Jhonathan Prieto
dc.contributor.authorSevilla, Galo T.
dc.contributor.authorAlfaraj, Nasir
dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorKutbee, Arwa T.
dc.contributor.authorSridharan, Ashvitha
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-05-05T14:48:14Z
dc.date.available2015-05-05T14:48:14Z
dc.date.issued2015-05-01
dc.identifier.citationNon-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing 2015:150501111031008 ACS Nano
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.pmid25933370
dc.identifier.doi10.1021/acsnano.5b00686
dc.identifier.urihttp://hdl.handle.net/10754/552326
dc.description.abstractThe ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stack, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length exhibits ION ~70 μA/μm (VDS = 2 V, VGS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.5b00686
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b00686.
dc.subjectDouble-transfer
dc.subjectSoft material
dc.subjectnon-planar
dc.subjectFinFETs
dc.subjectAsymmetric surface
dc.titleNon-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing
dc.typeArticle
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentThe KAUST Schools (TKS)
dc.identifier.journalACS Nano
dc.eprint.versionPost-print
kaust.personRojas, Jhonathan Prieto
kaust.personSevilla, Galo T.
kaust.personAlfaraj, Nasir
kaust.personGhoneim, Mohamed T.
kaust.personKutbee, Arwa T.
kaust.personHussain, Muhammad Mustafa
kaust.personSridharan, Ashvitha
refterms.dateFOA2016-05-01T00:00:00Z


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