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    High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

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    Type
    Article
    Authors
    Nayak, Pradipta K.
    Hedhili, Mohamed N. cc
    Cha, Dong Kyu
    Alshareef, Husam N. cc
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Functional Nanomaterials and Devices Research Group
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2013-07-18
    Online Publication Date
    2013-07-18
    Print Publication Date
    2013-07-15
    Permanent link to this record
    http://hdl.handle.net/10754/552320
    
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    Abstract
    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.
    Citation
    High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric 2013, 103 (3):033518 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4816060
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/103/3/10.1063/1.4816060
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4816060
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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