High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
Type
ArticleKAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabFunctional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2013-07-18Online Publication Date
2013-07-18Print Publication Date
2013-07-15Permanent link to this record
http://hdl.handle.net/10754/552320
Metadata
Show full item recordAbstract
We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.Citation
High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric 2013, 103 (3):033518 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4816060