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dc.contributor.authorCaraveo-Frescas, J. A.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-05-05T14:30:32Z
dc.date.available2015-05-05T14:30:32Z
dc.date.issued2013-11-25
dc.identifier.citationTransparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors 2013, 103 (22):222103 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4833541
dc.identifier.urihttp://hdl.handle.net/10754/552318
dc.description.abstractp-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/22/10.1063/1.4833541
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleTransparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personAlshareef, Husam N.
refterms.dateFOA2018-06-14T07:34:02Z


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