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dc.contributor.authorHanna, Amir
dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorBahabry, Rabab R.
dc.contributor.authorHussain, Aftab M.
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-05-05T14:46:42Z
dc.date.available2015-05-05T14:46:42Z
dc.date.issued2013-11-26
dc.identifier.citationZinc oxide integrated area efficient high output low power wavy channel thin film transistor 2013, 103 (22):224101 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4836235
dc.identifier.urihttp://hdl.handle.net/10754/552312
dc.description.abstractWe report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/22/10.1063/1.4836235
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleZinc oxide integrated area efficient high output low power wavy channel thin film transistor
dc.typeArticle
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
kaust.personHanna, Amir
kaust.personGhoneim, Mohamed T.
kaust.personHussain, Aftab M.
kaust.personHussain, Muhammad Mustafa
kaust.personBahabry, Rabab R.
refterms.dateFOA2018-06-13T19:10:37Z


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