Zinc oxide integrated area efficient high output low power wavy channel thin film transistor
Type
ArticleAuthors
Hanna, Amir
Ghoneim, Mohamed T.

Bahabry, Rabab R.

Hussain, Aftab M.

Hussain, Muhammad Mustafa

KAUST Department
Integrated Nanotechnology LabElectrical Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Date
2013-11-26Online Publication Date
2013-11-26Print Publication Date
2013-11-25Permanent link to this record
http://hdl.handle.net/10754/552312
Metadata
Show full item recordAbstract
We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.Citation
Zinc oxide integrated area efficient high output low power wavy channel thin film transistor 2013, 103 (22):224101 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4836235