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    Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

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    1.4836235.pdf
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    Type
    Article
    Authors
    Hanna, Amir cc
    Ghoneim, Mohamed T. cc
    Bahabry, Rabab R. cc
    Hussain, Aftab M. cc
    Hussain, Muhammad Mustafa cc
    KAUST Department
    Integrated Nanotechnology Lab
    Electrical Engineering Program
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Date
    2013-11-26
    Online Publication Date
    2013-11-26
    Print Publication Date
    2013-11-25
    Permanent link to this record
    http://hdl.handle.net/10754/552312
    
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    Abstract
    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.
    Citation
    Zinc oxide integrated area efficient high output low power wavy channel thin film transistor 2013, 103 (22):224101 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4836235
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/103/22/10.1063/1.4836235
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4836235
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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