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dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorSmith, Casey
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-05-05T14:37:55Z
dc.date.available2015-05-05T14:37:55Z
dc.date.issued2013-05-09
dc.identifier.citationSimplistic graphene transfer process and its impact on contact resistance 2013, 102 (18):183115 Applied Physics Letters
dc.identifier.issn00036951
dc.identifier.doi10.1063/1.4804642
dc.identifier.urihttp://hdl.handle.net/10754/552306
dc.description.abstractChemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/102/18/10.1063/1.4804642
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleSimplistic graphene transfer process and its impact on contact resistance
dc.typeArticle
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
kaust.personGhoneim, Mohamed T.
kaust.personSmith, Casey
kaust.personHussain, Muhammad Mustafa
refterms.dateFOA2018-06-13T13:36:53Z


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