Simplistic graphene transfer process and its impact on contact resistance
Permanent link to this recordhttp://hdl.handle.net/10754/552306
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AbstractChemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.
CitationSimplistic graphene transfer process and its impact on contact resistance 2013, 102 (18):183115 Applied Physics Letters
JournalApplied Physics Letters