Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films
Type
ArticleKAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabImaging and Characterization Core Lab
Date
2013-06-08Online Publication Date
2013-06-08Print Publication Date
2013-06-03Permanent link to this record
http://hdl.handle.net/10754/552304
Metadata
Show full item recordAbstract
Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2 = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2 = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.Citation
Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films 2013, 102 (22):222411 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4810783