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    In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

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    Type
    Article
    Authors
    Sarath Kumar, S. R.
    Nayak, Pradipta K.
    Hedhili, Mohamed N. cc
    Khan, Yasser
    Alshareef, Husam N. cc
    KAUST Department
    Electrical Engineering Program
    Functional Nanomaterials and Devices Research Group
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2013-11-07
    Online Publication Date
    2013-11-07
    Print Publication Date
    2013-11-04
    Permanent link to this record
    http://hdl.handle.net/10754/552302
    
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    Abstract
    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.
    Citation
    In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition 2013, 103 (19):192109 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4829356
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/103/19/10.1063/1.4829356
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4829356
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program

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