In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition
Type
ArticleKAUST Department
Electrical Engineering ProgramFunctional Nanomaterials and Devices Research Group
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2013-11-07Online Publication Date
2013-11-07Print Publication Date
2013-11-04Permanent link to this record
http://hdl.handle.net/10754/552302
Metadata
Show full item recordAbstract
We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.Citation
In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition 2013, 103 (19):192109 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4829356