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dc.contributor.authorWang, Zhenwei
dc.contributor.authorAl-Jawhari, Hala A.
dc.contributor.authorNayak, Pradipta K.
dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorWei, Nini
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-05-05T08:52:00Z
dc.date.available2015-05-05T08:52:00Z
dc.date.issued2015-04-20
dc.identifier.citationLow Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer 2015, 5:9617 Scientific Reports
dc.identifier.issn2045-2322
dc.identifier.pmid25892711
dc.identifier.doi10.1038/srep09617
dc.identifier.urihttp://hdl.handle.net/10754/552270
dc.description.abstractIn this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/srep09617
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
dc.subjectElectronic devices
dc.subjectSemiconductors
dc.subjectApplied physics
dc.titleLow Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalScientific Reports
dc.identifier.pmcidPMC4402970
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabia
kaust.personNayak, Pradipta K.
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personWei, Nini
kaust.personHedhili, Mohamed N.
kaust.personAlshareef, Husam N.
kaust.personWang, Zhenwei
refterms.dateFOA2018-06-13T13:34:18Z
dc.date.published-online2015-04-20
dc.date.published-print2015-09


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