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    Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

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    Type
    Article
    Authors
    Hota, Mrinal Kanti cc
    Caraveo-Frescas, Jesus Alfonso
    McLachlan, M. A.
    Alshareef, Husam N. cc
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2014-04-14
    Permanent link to this record
    http://hdl.handle.net/10754/552159
    
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    Abstract
    We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.
    Citation
    Electroforming-free resistive switching memory effect in transparent p-type tin monoxide 2014, 104 (15):152104 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4870405
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/104/15/10.1063/1.4870405
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4870405
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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