Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
Type
ArticleKAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-04-14Permanent link to this record
http://hdl.handle.net/10754/552159
Metadata
Show full item recordAbstract
We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.Citation
Electroforming-free resistive switching memory effect in transparent p-type tin monoxide 2014, 104 (15):152104 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4870405