Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
KAUST DepartmentMaterials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/552159
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AbstractWe report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.
CitationElectroforming-free resistive switching memory effect in transparent p-type tin monoxide 2014, 104 (15):152104 Applied Physics Letters
JournalApplied Physics Letters