Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric
AuthorsGhoneim, Mohamed T.
Kutbee, Arwa T.
Ghodsi Nasseri, Seyed Faizelldin
Hussain, Muhammad Mustafa
KAUST DepartmentIntegrated Nanotechnology Lab
Electrical Engineering Program
The KAUST Schools (TKS)
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/552155
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AbstractWe report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.
CitationMechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric 2014, 104 (23):234104 Applied Physics Letters
JournalApplied Physics Letters