G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach
Type
ArticleKAUST Department
Computational Physics and Materials Science (CPMS)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-05-14Online Publication Date
2014-05-14Print Publication Date
2014-05-14Permanent link to this record
http://hdl.handle.net/10754/552146
Metadata
Show full item recordAbstract
Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (Ci) and substitutional (Cs) atoms forming the CiCs defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of CiCs defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.Citation
G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach 2014, 115 (18):183509 Journal of Applied PhysicsPublisher
AIP PublishingJournal
Journal of Applied Physicsae974a485f413a2113503eed53cd6c53
10.1063/1.4875658