Asymmetric electroresistance of cluster glass state in manganites
Type
ArticleKAUST Department
Laboratory of Nano Oxides for Sustainable EnergyMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-03-31Permanent link to this record
http://hdl.handle.net/10754/552144
Metadata
Show full item recordAbstract
We report the electrostatic modulation of transport in strained Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films grown on SrTiO3 by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.Citation
Asymmetric electroresistance of cluster glass state in manganites 2014, 104 (13):133508 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics Lettersae974a485f413a2113503eed53cd6c53
10.1063/1.4870480