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    Asymmetric electroresistance of cluster glass state in manganites

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    Type
    Article
    Authors
    Lourembam, James
    Ding, Junfeng
    Bera, Ashok cc
    Lin, Weinan
    Wu, Tao cc
    KAUST Department
    Laboratory of Nano Oxides for Sustainable Energy
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2014-03-31
    Permanent link to this record
    http://hdl.handle.net/10754/552144
    
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    Abstract
    We report the electrostatic modulation of transport in strained Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films grown on SrTiO3 by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.
    Citation
    Asymmetric electroresistance of cluster glass state in manganites 2014, 104 (13):133508 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4870480
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/104/13/10.1063/1.4870480
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4870480
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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