Band gap tunning in BN-doped graphene systems with high carrier mobility
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
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AbstractUsing density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.
CitationBand gap tunning in BN-doped graphene systems with high carrier mobility 2014, 104 (7):073116 Applied Physics Letters
JournalApplied Physics Letters