The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

Files
07064700.pdf (720.13 KB)

Type
Article

Authors
Wang, H. H.
Tian, J. S.
Chen, C. Y.
Huang, H. H.
Yeh, Y. C.
Deng, P. Y.
Chang, L.
Chu, Y. H.
Wu, Y. R.
He, Jr-Hau

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Nano Energy Lab

Online Publication Date
2015-03-20

Print Publication Date
2015-04

Date
2015-03-20

Abstract
The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

Citation
The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO 2015, 7 (2):1 IEEE Photonics Journal

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
IEEE Photonics Journal

DOI
10.1109/JPHOT.2015.2415672

Additional Links
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7064700

Permanent link to this record
http://hdl.handle.net/10754/550506
Collections
Articles
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
KAUST Solar Center (KSC)