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dc.contributor.authorMajid, Mohammed Abdul
dc.contributor.authorHugues, M.
dc.contributor.authorVézian, S.
dc.contributor.authorChilds, D. T. D.
dc.contributor.authorHogg, R. A.
dc.date.accessioned2015-04-12T13:38:59Z
dc.date.available2015-04-12T13:38:59Z
dc.date.issued2012-12
dc.identifier.citationOptimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices 2012, 4 (6):2066 IEEE Photonics Journal
dc.identifier.issn1943-0655
dc.identifier.doi10.1109/JPHOT.2012.2225140
dc.identifier.urihttp://hdl.handle.net/10754/528240
dc.description.abstractThe optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6332455
dc.rights(c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.titleOptimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices
dc.typeArticle
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalIEEE Photonics Journal
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nano-science and Technology, Sheffield S3 7HQ, U.K.
dc.contributor.institutionEPSRC National Centre for III-V Technologies, Centre for Nano-science and Technology, Sheffield S3 7HQ, U.K.
dc.contributor.institutionCentre de Recherche sur l’Hétéro-Epitaxie et ses Applications (CRHEA-CNRS), Valbonne 06560, France
kaust.personMajid, Mohammed Abdul
refterms.dateFOA2018-06-13T16:47:50Z


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