Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices
KAUST DepartmentPhotonics Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/528240
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AbstractThe optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.
CitationOptimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices 2012, 4 (6):2066 IEEE Photonics Journal
JournalIEEE Photonics Journal