High-Performance 1.55-µm Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region

Files
06851845.pdf (850.41 KB)

Type
Article

Authors
Khan, Mohammed Zahed Mustafa
Ng, Tien Khee
Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Photonics Laboratory

Date
2014-08

Abstract
We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of <; 0.2 dB, related largely to the contribution from dispersive height dash ensembles of the highly inhomogeneous active region. These C-L communication band devices will find applications in various cross-disciplinary fields of optical metrology, optical coherent tomography, etc.

Citation
High-Performance 1.55-µm Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region 2014, 6 (4):1 IEEE Photonics Journal

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
IEEE Photonics Journal

DOI
10.1109/JPHOT.2014.2337892

Additional Links
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6851845

Permanent link to this record
http://hdl.handle.net/10754/528238
Collections
Articles
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Photonics Laboratory