High-Performance 1.55-µm Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/528238
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AbstractWe report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of <; 0.2 dB, related largely to the contribution from dispersive height dash ensembles of the highly inhomogeneous active region. These C-L communication band devices will find applications in various cross-disciplinary fields of optical metrology, optical coherent tomography, etc.
CitationHigh-Performance 1.55-µm Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region 2014, 6 (4):1 IEEE Photonics Journal
JournalIEEE Photonics Journal