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dc.contributor.authorLi, Jingqi
dc.contributor.authorYue, Weisheng
dc.contributor.authorGuo, Zaibing
dc.contributor.authorYang, Yang
dc.contributor.authorWang, Xianbin
dc.contributor.authorSyed, Ahad A.
dc.contributor.authorZhang, Yafei
dc.date.accessioned2015-03-23T08:19:59Z
dc.date.available2015-03-23T08:19:59Z
dc.date.issued2014-07-01
dc.identifier.citationUnique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon 2014, 6 (3):287 Nano-Micro Letters
dc.identifier.issn2311-6706
dc.identifier.issn2150-5551
dc.identifier.doi10.1007/BF03353793
dc.identifier.doi10.5101/nml140031a
dc.identifier.urihttp://hdl.handle.net/10754/346982
dc.description.abstractA vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.
dc.publisherSpringer Nature
dc.relation.urlhttp://link.springer.com/10.1007/BF03353793
dc.rightsArchived with thanks to Nano-Micro Letters
dc.titleUnique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon
dc.typeArticle
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPatterning
dc.contributor.departmentPhysical Characterization
dc.identifier.journalNano-Micro Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKey Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P.R. China
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personLi, Jingqi
kaust.personYue, Weisheng
kaust.personGuo, Zaibing
kaust.personYang, Yang
kaust.personWang, Xianbin
kaust.personSyed, Ahad A.
refterms.dateFOA2018-06-13T16:18:03Z
dc.date.published-online2014-07-01
dc.date.published-print2014-07


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