Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach
Type
ArticleAuthors
Hussain, Aftab M.
Singh, Nirpendra

Fahad, Hossain M.
Rader, Kelly
Schwingenschlögl, Udo

Hussain, Muhammad Mustafa

KAUST Department
Computational Physics and Materials Science (CPMS)Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2014-12-14Permanent link to this record
http://hdl.handle.net/10754/346978
Metadata
Show full item recordAbstract
We present a novel semiconducting alloy, silicon-tin (SiSn), as channel material for complementary metal oxide semiconductor (CMOS) circuit applications. The material has been studied theoretically using first principles analysis as well as experimentally by fabricating MOSFETs. Our study suggests that the alloy offers interesting possibilities in the realm of silicon band gap tuning. We have explored diffusion of tin (Sn) into the industry's most widely used substrate, silicon (100), as it is the most cost effective, scalable and CMOS compatible way of obtaining SiSn. Our theoretical model predicts a higher mobility for p-channel SiSn MOSFETs, due to a lower effective mass of the holes, which has been experimentally validated using the fabricated MOSFETs. We report an increase of 13.6% in the average field effect hole mobility for SiSn devices compared to silicon control devices.Citation
Exploring SiSn as a performance enhancing semiconductor: A theoretical and experimental approach 2014, 116 (22):224506 Journal of Applied PhysicsPublisher
AIP PublishingJournal
Journal of Applied Physicsae974a485f413a2113503eed53cd6c53
10.1063/1.4904056