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dc.contributor.authorDuran Retamal, Jose Ramon
dc.contributor.authorKang, Chen-Fang
dc.contributor.authorHo, Chih-Hsiang
dc.contributor.authorKe, Jr-Jian
dc.contributor.authorChang, Wen-Yuan
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2015-03-23T08:08:04Z
dc.date.available2015-03-23T08:08:04Z
dc.date.issued2014-12-22
dc.identifier.citationEffect of ultraviolet illumination on metal oxide resistive memory 2014, 105 (25):253111 Applied Physics Letters
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4904396
dc.identifier.urihttp://hdl.handle.net/10754/346977
dc.description.abstractWe investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/105/25/10.1063/1.4904396
dc.rightsThis article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions.
dc.titleEffect of ultraviolet illumination on metal oxide resistive memory
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personHe, Jr-Hau
kaust.personDuran Retamal, Jose Ramon
kaust.personKang, Chenfang
kaust.personKe, Jrjian
kaust.personChang, Wenyuan
refterms.dateFOA2018-06-13T16:19:27Z


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