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dc.contributor.authorNayak, Pradipta K.
dc.contributor.authorWang, Zhenwei
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-03-23T08:16:17Z
dc.date.available2015-03-23T08:16:17Z
dc.date.issued2015-03-09
dc.identifier.citationHighly stable thin film transistors using multilayer channel structure 2015, 106 (10):103505 Applied Physics Letters
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4914971
dc.identifier.urihttp://hdl.handle.net/10754/346973
dc.description.abstractWe report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914971
dc.rightsCopyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
dc.titleHighly stable thin film transistors using multilayer channel structure
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personNayak, Pradipta K.
kaust.personAnjum, Dalaver H.
kaust.personHedhili, Mohamed N.
kaust.personAlshareef, Husam N.
kaust.personWang, Zhenwei
refterms.dateFOA2018-06-13T16:19:39Z


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