Highly stable thin film transistors using multilayer channel structure
KAUST DepartmentMaterials Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/346973
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AbstractWe report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.
CitationHighly stable thin film transistors using multilayer channel structure 2015, 106 (10):103505 Applied Physics Letters
JournalApplied Physics Letters