Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

Abstract
Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Citation
Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering 2015, 16 (1):015001 Science and Technology of Advanced Materials

Publisher
Informa UK Limited

Journal
Science and Technology of Advanced Materials

DOI
10.1088/1468-6996/16/1/015001

Additional Links
http://stacks.iop.org/1468-6996/16/i=1/a=015001?key=crossref.cbef4704f6649e4f78f7f2875116707e

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