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dc.contributor.authorZhou, Lingjun
dc.contributor.authorGrigoryan, Vahram L.
dc.contributor.authorMaekawa, Sadamichi
dc.contributor.authorWang, Xuhui
dc.contributor.authorXiao, Jiang
dc.date.accessioned2015-03-17T13:16:57Z
dc.date.available2015-03-17T13:16:57Z
dc.date.issued2015-01-08
dc.identifier.citationSpin Hall effect by surface roughness 2015, 91 (4) Physical Review B
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.91.045407
dc.identifier.urihttp://hdl.handle.net/10754/346762
dc.description.abstractThe spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.91.045407
dc.relation.urlhttp://arxiv.org/abs/1407.8310
dc.rightsArchived with thanks to Physical Review B
dc.titleSpin Hall effect by surface roughness
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
dc.contributor.institutionAdvanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan
dc.contributor.institutionCREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan
dc.contributor.institutionCollaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.identifier.arxivid1407.8310
kaust.personWang, Xuhui
dc.versionv1
refterms.dateFOA2018-06-13T16:19:06Z
dc.date.posted2014-07-31


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