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    Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

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    Type
    Article
    Authors
    Duran Retamal, Jose Ramon
    Kang, Chen-Fang
    Yang, Po-Kang
    Lee, Chuan-Pei
    Lien, Der-Hsien cc
    Ho, Chih-Hsiang
    He, Jr-Hau cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Date
    2014-11-03
    Permanent link to this record
    http://hdl.handle.net/10754/346742
    
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    Abstract
    A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.
    Citation
    Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory 2014, 105 (18):182101 Applied Physics Letters
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    ISSN
    0003-6951
    1077-3118
    DOI
    10.1063/1.4901072
    Additional Links
    http://scitation.aip.org/content/aip/journal/apl/105/18/10.1063/1.4901072
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4901072
    Scopus Count
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    Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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