Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory
Type
ArticleAuthors
Duran Retamal, Jose RamonKang, Chen-Fang
Yang, Po-Kang
Lee, Chuan-Pei
Lien, Der-Hsien

Ho, Chih-Hsiang
He, Jr-Hau

Date
2014-11-03Permanent link to this record
http://hdl.handle.net/10754/346742
Metadata
Show full item recordAbstract
A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.Citation
Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory 2014, 105 (18):182101 Applied Physics LettersPublisher
AIP PublishingJournal
Applied Physics LettersISSN
0003-69511077-3118
ae974a485f413a2113503eed53cd6c53
10.1063/1.4901072