Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes
AuthorsRoqan, Iman S.
Franklin, J. B.
Flemban, Tahani H.
Petrov, P. K.
Ryan, M. P.
Alford, N. M.
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Computer Science Program
KAUST Solar Center (KSC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Permanent link to this recordhttp://hdl.handle.net/10754/346729
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AbstractWe demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.
CitationObtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes 2015, 117 (7):073904 Journal of Applied Physics
JournalJournal of Applied Physics