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dc.contributor.authorHong, Jinhua
dc.contributor.authorHu, Zhixin
dc.contributor.authorProbert, Matt
dc.contributor.authorLi, Kun
dc.contributor.authorLv, Danhui
dc.contributor.authorYang, Xinan
dc.contributor.authorGu, Lin
dc.contributor.authorMao, Nannan
dc.contributor.authorFeng, Qingliang
dc.contributor.authorXie, Liming
dc.contributor.authorZhang, Jin
dc.contributor.authorWu, Dianzhong
dc.contributor.authorZhang, Zhiyong
dc.contributor.authorJin, Chuanhong
dc.contributor.authorJi, Wei
dc.contributor.authorZhang, Xixiang
dc.contributor.authorYuan, Jun
dc.contributor.authorZhang, Ze
dc.date.accessioned2015-03-16T05:57:17Z
dc.date.available2015-03-16T05:57:17Z
dc.date.issued2015-02-19
dc.identifier.citationExploring atomic defects in molybdenum disulphide monolayers 2015, 6:6293 Nature Communications
dc.identifier.issn2041-1723
dc.identifier.pmid25695374
dc.identifier.doi10.1038/ncomms7293
dc.identifier.urihttp://hdl.handle.net/10754/346700
dc.description.abstractDefects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms7293
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
dc.titleExploring atomic defects in molybdenum disulphide monolayers
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNature Communications
dc.identifier.pmcidPMC4346634
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionState Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University
dc.contributor.institutionBeijing Key Laboratory of Optoelectronic Functional Materials and Micro- Nano Devices, Department of Physics, Renmin University of China
dc.contributor.institutionDepartment of Physics, University of York
dc.contributor.institutionInstituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter
dc.contributor.institutionCAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology
dc.contributor.institutionCenter for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University
dc.contributor.institutionKey Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University
dc.contributor.institutionDepartment of Physics and Astronomy, Collaborative Innovation Center of Advanced Microstructures, Shanghai Jiao Tong University
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personLi, Kun
kaust.personZhang, Xixiang
refterms.dateFOA2018-06-14T07:24:58Z
dc.date.published-online2015-02-19
dc.date.published-print2015-12


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