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    Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

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    Type
    Article
    Authors
    Venkatesh, S.
    Franklin, J. B.
    Ryan, M. P.
    Lee, J.-S.
    Ohldag, Hendrik
    McLachlan, M. A.
    Alford, N. M.
    Roqan, Iman S. cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Semiconductor and Material Spectroscopy (SMS) Laboratory
    Date
    2015-01-07
    Online Publication Date
    2015-01-07
    Print Publication Date
    2015-01-07
    Permanent link to this record
    http://hdl.handle.net/10754/344119
    
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    Abstract
    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (<Gd 0.112 at. %) at low oxygen deposition pressure (<25 mTorr) were ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott's theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.
    Citation
    Defect-band mediated ferromagnetism in Gd-doped ZnO thin films 2015, 117 (1):013913 Journal of Applied Physics
    Sponsors
    The authors acknowledge the financial support from the Academic Excellence Alliance (AEA) Grant from King Abdullah University of Science and Technology (KAUST), Saudi Arabia. We thank Dr. Katharina, Lorenz Instituto Superior Técnico, Universidade de Lisboa, Portugal for fitting the RBS data. Soft X-ray spectroscopic studies were carried out at the SSRL, a Directorate of SLAC and an Office of Science User Facility operated for the U.S. DOE Office of Science by Stanford University. J.S.L. acknowledges partial support by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-76SF00515.
    Publisher
    AIP Publishing
    Journal
    Journal of Applied Physics
    DOI
    10.1063/1.4905585
    Additional Links
    http://scitation.aip.org/content/aip/journal/jap/117/1/10.1063/1.4905585
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4905585
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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