Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection
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ArticleAuthors
Chang, Yung-HuangZhang, Wenjing
Zhu, Yihan
Han, Yu

Pu, Jiang
Chang, Jan-Kai
Hsu, Wei-Ting
Huang, Jing-Kai
Hsu, Chang-Lung
Chiu, Ming-Hui

Takenobu, Taishi
Li, Henan
Wu, Chih-I
Chang, Wen-Hao

Wee, Andrew Thye Shen
Li, Lain-Jong

KAUST Department
Advanced Membranes and Porous Materials Research CenterChemical Science Program
Material Science and Engineering Program
Nanostructured Functional Materials (NFM) laboratory
Physical Science and Engineering (PSE) Division
Date
2014-08-07Online Publication Date
2014-08-07Print Publication Date
2014-08-26Permanent link to this record
http://hdl.handle.net/10754/338571
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Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.Citation
Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection 2014, 8 (8):8582 ACS NanoPublisher
American Chemical Society (ACS)Journal
ACS NanoAdditional Links
http://pubs.acs.org/doi/abs/10.1021/nn503287mae974a485f413a2113503eed53cd6c53
10.1021/nn503287m