Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition
AuthorsDocherty, Callum J.
Joyce, Hannah J.
Herz, Laura M.
Johnston, Michael B.
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2014-11-04
Print Publication Date2014-11-25
Permanent link to this recordhttp://hdl.handle.net/10754/338540
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AbstractWe have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.
CitationUltrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition 2014, 8 (11):11147 ACS Nano
PublisherAmerican Chemical Society (ACS)
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