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dc.contributor.authorSun, Jian
dc.contributor.authorKosel, Jürgen
dc.date.accessioned2014-11-11T14:33:26Z
dc.date.available2014-11-11T14:33:26Z
dc.date.issued2013-02-13
dc.identifier.citationSun J, Kosel J (2013) Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review. Materials 6: 500-516. doi:10.3390/ma6020500.
dc.identifier.issn19961944
dc.identifier.doi10.3390/ma6020500
dc.identifier.urihttp://hdl.handle.net/10754/334645
dc.description.abstractThe Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device's performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.
dc.language.isoen
dc.publisherMDPI AG
dc.rightsThis is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
dc.rightsArchived with thanks to Materials
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.subjectExtraordinary magnetoresistance effect
dc.subjectHigh-mobility semiconductors
dc.subjectIII-V semiconductors
dc.subjectMagnetic sensors
dc.subjectMagnetoresistance effect
dc.subjectSemiconductor/metal hybrid
dc.subjectDifferent geometry
dc.subjectExtraordinary magnetoresistances
dc.subjectHigh performance devices
dc.subjectII-IV semiconductors
dc.subjectMagnetoresistance effects
dc.subjectMaterial selection
dc.subjectUnderlying principles
dc.subjectLorentz force
dc.subjectMagnetic fields
dc.subjectMagnetoresistance
dc.titleExtraordinary magnetoresistance in semiconductor/metal hybrids: A review
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentSensing, Magnetism and Microsystems Lab
dc.identifier.journalMaterials
dc.eprint.versionPublisher's Version/PDF
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personSun, Jian
kaust.personKosel, Jürgen
refterms.dateFOA2018-06-13T16:02:54Z


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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Except where otherwise noted, this item's license is described as This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.