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dc.contributor.authorTian, He
dc.contributor.authorTan, Zhen
dc.contributor.authorWu, Can
dc.contributor.authorWang, Xiaomu
dc.contributor.authorMohammad, Mohammad Ali
dc.contributor.authorXie, Dan
dc.contributor.authorYang, Yi
dc.contributor.authorWang, Jing
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorXu, Jun
dc.contributor.authorRen, Tian-ling
dc.date.accessioned2014-11-11T14:29:43Z
dc.date.available2014-11-11T14:29:43Z
dc.date.issued2014-08-11
dc.identifier.citationTian H, Tan Z, Wu C, Wang X, Mohammad MA, et al. (2014) Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions. Sci Rep 4: 5951. doi:10.1038/srep05951.
dc.identifier.issn20452322
dc.identifier.pmid25109609
dc.identifier.doi10.1038/srep05951
dc.identifier.urihttp://hdl.handle.net/10754/334562
dc.description.abstractRecently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.
dc.language.isoen
dc.publisherSpringer Nature
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleNovel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalScientific Reports
dc.identifier.pmcidPMC4127518
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of Microelectronics, Tsinghua University, Beijing 100084, China
dc.contributor.institutionTsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personLi, Lain-Jong
refterms.dateFOA2018-06-14T07:17:18Z
dc.date.published-online2014-08-11
dc.date.published-print2015-05


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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/
Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/