We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

We show that graphene-percolated polymer composites exhibit fractional capacitance response in the frequency range of 50 kHz–2 MHz. In addition, it is shown that by varying the loading of graphene within the matrix from 2.5% to 12%, the phase can be controllably tuned from −67° to −31°, respectively. The electrostatic fractional capacitors proposed herein are easy to fabricate and offer integration capability on electronic printed circuit boards.

In this paper, a method to find the maximum power transfer conditions in bimorph piezoelectric-based harvesters is proposed. Explicitly, we derive a closed form expression that relates the load resistance to the mechanical parameters describing the bimorph based on the electromechanical, single degree of freedom, analogy. Further, by taking into account the intrinsic capacitance of the piezoelectric harvester, a more descriptive expression of the resonant frequency in piezoelectric bimorphs was derived. In interest of impartiality, we apply the proposed philosophy on previously published experimental results and compare it with other reported hypotheses. It was found that the proposed method was able to predict the actual optimum load resistance more accurately than other methods reported in the literature. © 2012 American Institute of Physics.

This work proposes a novel methodology for estimating the power output of piezoelectric generators. An analytical model that estimates for the first time the loss ratio and output power of piezoelectric generators based on the direct mechanical-to-electrical analogy, electromagnetic theory, and power system theory is developed. The mechanical-to-electrical analogy and power system theory allow the derivation of an equivalent input impedance expression for the network, whereas electromagnetic transmission line theory allows deduction of the equivalent electromechanical loss of the piezoelectric generator. By knowing the mechanical input power and the loss of the network, calculation of the output power of the piezoelectric device becomes a straightforward procedure. Experimental results based on published data are also presented to validate the analytical solution. In order to fully benefit from the well-established electromagnetic transmission line and electric circuit theories, further analyses on the resonant frequency, bandwidth, and sensitivity are presented. Compared to the conventional modeling methods currently being adopted in the literature, the proposed method provides significant additional information that is crucial for enhanced device operation and quick performance optimization. © 2011 IOP Publishing Ltd.