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dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorKhan, Yasser
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2014-08-27T09:51:04Z
dc.date.available2014-08-27T09:51:04Z
dc.date.issued2014-06-10
dc.identifier.citationCaraveo-Frescas JA, Khan MA, Alshareef HN (2014) Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility. Sci Rep 4. doi:10.1038/srep05243.
dc.identifier.issn20452322
dc.identifier.pmid24912617
dc.identifier.doi10.1038/srep05243
dc.identifier.urihttp://hdl.handle.net/10754/325431
dc.description.abstractHere we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.
dc.language.isoen
dc.publisherSpringer Nature
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported license. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/
dc.titlePolymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
dc.typeArticle
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalScientific Reports
dc.identifier.pmcidPMC4050383
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionUnidad Académica de Sistemas Arrecifales (Puerto Morelos), Instituto de Ciencias Del Mar y Limnología, Universidad Nacional Autõnoma de México, Puerto Morelos, QR 77580, Mexico
dc.contributor.institutionSchool of Natural Sciences, University of California Merced, 5200 North Lake Road, Merced, CA 95343, United States
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personAlshareef, Husam N.
kaust.personKhan, Yasser
refterms.dateFOA2018-06-13T12:11:39Z
dc.date.published-online2014-06-10
dc.date.published-print2015-05


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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported license. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported license. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/