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dc.contributor.authorNayak, Pradipta K.
dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorWang, Zhenwei
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorWang, Qingxiao
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2014-08-27T09:50:57Z
dc.date.available2014-08-27T09:50:57Z
dc.date.issued2014-04-14
dc.identifier.citationNayak PK, Caraveo-Frescas JA, Wang Z, Hedhili MN, Wang QX, et al. (2014) Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer. Sci Rep 4. doi:10.1038/srep04672.
dc.identifier.issn20452322
dc.identifier.pmid24728223
dc.identifier.doi10.1038/srep04672
dc.identifier.urihttp://hdl.handle.net/10754/325428
dc.description.abstractWe report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.
dc.language.isoen
dc.publisherSpringer Nature
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/
dc.titleThin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalScientific Reports
dc.identifier.pmcidPMC3985073
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionUnidad Académica de Sistemas Arrecifales (Puerto Morelos), Instituto de Ciencias Del Mar y Limnología, Universidad Nacional Autõnoma de México, Puerto Morelos, QR 77580, Mexico
dc.contributor.institutionSchool of Natural Sciences, University of California Merced, 5200 North Lake Road, Merced, CA 95343, United States
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personNayak, Pradipta K.
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personHedhili, Mohamed N.
kaust.personWang, Qingxiao
kaust.personAlshareef, Husam N.
kaust.personWang, Zhenwei
refterms.dateFOA2018-06-13T13:20:51Z
dc.date.published-online2014-04-14
dc.date.published-print2015-05


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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/