Polarization, which represents the vector nature of electromagnetic waves, plays a fundamental role in optics. Fast, simple, and broadband polarization state characterization is required by applications such as polarization communication, polarimetry, and remote sensing. However, conventional polarization detection methods face great difficulty in determining the phase difference between orthogonal polarization states and often require a series of measurements. Here, we demonstrate how polarization-dependent holography enables direct polarization detection in a single measurement. Using a multiplexed Pancharatnam–Berry phase metasurface, we generate orthogonally polarized holograms that partially overlap with a spatially varying phase difference. Both amplitude and phase difference can be read from the holographic image in the circular polarization basis, facilitating the extraction of all Stokes parameters for polarized light. The metahologram detects polarization reliably at several near-infrared to visible wavelengths, and simulations predict broadband operation in the 580–940 nm spectral range. This method enables fast and compact polarization analyzing devices, e.g., for spectroscopy, sensing, and communications.

A pronounced enhancement of the power conversion efficiency (PCE) by 38% is achieved in one-step doctor-blade printing organic solar cells (OSCs) via a simple solvent vapor annealing (SVA) step. The organic blend composed of a donor polymer, a nonfullerene acceptor, and an interfacial layer (IL) molecular component is found to phase-separate vertically when exposed to a solvent vapor-saturated atmosphere. Remarkably, the spontaneous formation of a fine, self-organized IL between the bulk heterojunction (BHJ) layer and the indium tin oxide (ITO) electrode facilitated by SVA yields solar cells with a significantly higher PCE (11.14%) than in control devices (8.05%) without SVA and in devices (10.06%) made with the more complex two-step doctor-blade printing method. The stratified nature of the ITO/IL/BHJ/cathode is corroborated by a range of complementary characterization techniques including surface energy, cross-sectional scanning electron microscopy, grazing incidence wide angle X-ray scattering, and X-ray photoelectron spectroscopy. This study demonstrates that a spontaneously formed IL with SVA treatment combines simplicity and precision with high device performance, thus making it attractive for large-area manufacturing of next-generation OSCs.

Low-bandgap small molecule (SM) donors that can be solution-processed with fullerene acceptors (e.g. PC61/71BM) are proving particularly promising in bulk-heterojunction (BHJ) solar cells. Compared to their π-conjugated polymer counterparts, SM donors are well defined (monodispersed) and more synthetically modular –with relatively wide ranges of bandgaps achievable in stepwise couplings of various donor and acceptor motifs. However, the optimization of SM-fullerene morphologies and BHJ device efficiencies relies more specifically on the use of processing additives, post-processing thermal or solvent vapor annealing (SVA) approaches, and achieving adequate interpenetrating networks and structural order in BHJ thin films can be challenging. In this report, we examine the correlated effects of molecular structure and post-processing SVA on the BHJ solar cell performance of a set of π-extended SM donors composed of dithieno[3,2-b:2',3'-d]pyrrole (DTP) and 5,6-difluorobenzo[c][1,2,5]thiadiazole ([2F]BT) units. In these systems (SM1-3), the introduction of additional alkyl substituents and unsubstituted thiophene rings on the peripheral unit groups critically impacts the effects of SVA steps on BHJ solar cell efficiency. We show that the more π-extended and alkyl-substituted analogue SM3 stands out –with BHJ device efficiencies of ca. 6% obtained from SVA with CS2– while SVA-treated SM3-based active layers also show the most favorable ordering and carrier mobility patterns. However, unlike numbers of SM donors reported in recent years, DTP–[2F]BT SM analogues are in general not prone to dramatic performance variations in BHJ thin films cast with processing additives. Our results indicate that the role of SVA steps is not independent of the molecular structure of the SM donors used in the BHJ solar cells.

We systematically investigate the spin-orbit coupling-induced band splitting originating from inversion symmetry breaking at the interface between a Co monolayer and 4d (Tc, Ru, Rh, Pd, and Ag) or 5d (Re, Os, Ir, Pt, and Au) transition metals. In spite of the complex band structure of these systems, the odd-in-k spin splitting of the bands displays striking similarities with the much simpler Rashba spin-orbit coupling picture. We establish a clear connection between the overall strength of the odd-in-k spin splitting of the bands and the charge transfer between the d orbitals at the interface. Furthermore, we show that the spin splitting of the Fermi surface scales with the induced orbital moment, weighted by the spin-orbit coupling.

Molecular acceptors are promising alternatives to fullerenes (e.g. PC61/71BM) in the fabrication of high-efficiency bulk-heterojunction (BHJ) solar cells. While solution-processed polymer-fullerene BHJ devices have recently met the 10% efficiency threshold, molecular acceptors have yet to prove comparably efficient with polymer donors. At this point in time, it is important to forge a better understanding of the design parameters that directly impact small-molecule (SM) acceptor performance in BHJ solar cells. In this report, we show that 2-(benzo[c][1,2,5]thiadiazol-4-ylmethylene)malononitrile (BM)-terminated SM acceptors can achieve efficiencies as high as 5.3% in BHJ solar cells with the polymer donor PCE10. Through systematic device optimization and characterization studies, we find that the nonfull-erene analogues (FBM, CBM and CDTBM) all perform comparably well, independent of the molecular structure and electronics of the π-bridge that links the two electron-deficient BM end groups. With estimated electron affinities within range of those of common fullerenes (4.0-4.3 eV), and a wider range of ionization potentials (6.2-5.6 eV), the SM acceptors absorb in the visible spectrum and effectively contribute to the BHJ device photocurrent. BM-substituted SM acceptors are promising alterna-tives to fullerenes in solution-processed BHJ solar cells.