Shen, Chao; Holguin Lerma, Jorge Alberto; Alatawi, Abdullah; Zou, Peng; Chi, Nan; Ng, Tien Khee; Ooi, Boon S.(IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), 2019)[Article]
Group-III-nitride superluminescent diodes (SLDs) are emerging as light sources for white lighting and visible light communications (VLC) owing to their droop-free, low speckle noise and large modulation bandwidth properties. In this study, we discuss the development of GaN-based visible SLDs, and analyze their electro-optical properties by studying the optical power-bandwidth products (PBPs) and injection current densities. The significant progress in blue SLDs and their applications for white light VLC is highlighted. A blue SLD, with an optical power of > 100 mW and large PBP of 536 mW.nm, is utilized to generate white light, resulting in a high CRI of 88.2. In a modulation experiment designed for an SLD-based VLC system, an on-off keying scheme exhibits a 1.2 Gbps data rate, with a bit error rate (BER) of 1.8 × 10-3, which satisfies the forward error correction (FEC) criteria. A high data rate of 3.4 Gbps is achieved using the same SLD transmitter, by applying the 16-QAM discrete multi-tone (DMT) modulation scheme for high-speed white light communication. The results reported here unequivocally point to the significant performance and versatility that GaN-based SLDs could offer for beyond-5G implementation, where white lighting and high spectral efficiency VLC systems can be simultaneously implemented.
Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.(Nanoscale Research Letters, Springer Nature, 2018-02-06)[Article]
Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.
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