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dc.contributor.advisorYounis, Mohammad I.*
dc.contributor.authorAbdul Rahim, Farhan*
dc.date.accessioned2014-06-16T12:13:10Z
dc.date.available2014-06-16T12:13:10Z
dc.date.issued2014-05en
dc.identifier.doi10.25781/KAUST-A3IZS
dc.identifier.urihttp://hdl.handle.net/10754/321646en
dc.description.abstractMEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.en
dc.language.isoenen
dc.subjectbouncingen
dc.subjectmems switchen
dc.subjectdouble electrodeen
dc.titleCONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODEen
dc.typeThesisen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division*
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberClaudel, Christian G.*
dc.contributor.committeememberThoroddsen, Sigurdur T*
thesis.degree.disciplineMechanical Engineeringen
thesis.degree.nameMaster of Scienceen
refterms.dateFOA2018-06-14T07:00:32Z


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