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dc.contributor.advisorHussain, Muhammad Mustafa
dc.contributor.authorNour, Maha A.
dc.date.accessioned2014-05-13T07:33:30Z
dc.date.available2014-05-13T07:33:30Z
dc.date.issued2014-04
dc.identifier.doi10.25781/KAUST-F3YFT
dc.identifier.urihttp://hdl.handle.net/10754/316751
dc.description.abstractFlexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.
dc.language.isoen
dc.subjectIII-Vs
dc.subjectFlexible
dc.subjectElectronics
dc.subjectEtching
dc.subjectTransformation Process
dc.subjectHigh Performance Devices
dc.titleTransformational III-V Electronics
dc.typeThesis
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
thesis.degree.grantorKing Abdullah University of Science and Technology
dc.contributor.committeememberAlouini, Mohamed-Slim
dc.contributor.committeememberLai, Zhiping
thesis.degree.disciplineElectrical Engineering
thesis.degree.nameMaster of Science
refterms.dateFOA2018-06-13T17:51:59Z


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