Quantum capacitance in topological insulators under strain in a tilted magnetic field
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2012-12-07
Print Publication Date2012-12-03
Permanent link to this recordhttp://hdl.handle.net/10754/316716
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AbstractTopological insulators exhibit unique properties due to surface states of massless Dirac fermions with conserved time reversal symmetry. We consider the quantum capacitance under strain in an external tilted magnetic field and demonstrate a minimum at the charge neutrality point due to splitting of the zeroth Landau level. We also find beating in the Shubnikov de Haas oscillations due to strain, which originate from the topological helical states. Varying the tilting angle from perpendicular to parallel washes out these oscillations with a strain induced gap at the charge neutrality point. Our results explain recent quantum capacitance and transport experiments.
CitationTahir M, Schwingenschlögl U (2012) Quantum capacitance in topological insulators under strain in a tilted magnetic field. Appl Phys Lett 101: 231609. doi:10.1063/1.4770000.
JournalApplied Physics Letters