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dc.contributor.authorJanjua, Bilal
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEl-Desouki, M. M.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2014-04-19T18:04:06Z
dc.date.available2014-04-19T18:04:06Z
dc.date.issued2014-04
dc.identifier.citationJanjua B, Ng TK, Alyamani AY, El-Desouki MM, Ooi BS (2014) Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes. IEEE Photonics Journal 6: 1-9. doi:10.1109/JPHOT.2014.2310199.
dc.identifier.issn1943-0655
dc.identifier.doi10.1109/JPHOT.2014.2310199
dc.identifier.urihttp://hdl.handle.net/10754/316028
dc.description.abstractWe study the enhanced hole confinement by having a large bandgap AlGaN monolayer insertion (MLI) between the quantum well (QW) and the quantum barrier (QB). The numerical analysis examines the energy band alignment diagrams, using a self-consistent 6 × 6 k ·p method and, considering carrier distribution, recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates), under equilibrium and forward bias conditions. The active region is based on AlaGa1-aN (barrier)/AlbGa1-bN (MLI)/AlcGa1-cN (well)/AldGa1-dN (barrier), where b > d > a > c. A large bandgap AlbGa1-bN mono layer, inserted between the QW and QB, was found to be effective in providing stronger hole confinement. With the proposed band engineering scheme, an increase of more than 30% in spatial overlap of carrier wavefunction was obtained, with a considerable increase in carrier density and direct radiative recombination rates. The single-QW-based UV-LED was designed to emit at 280 nm, which is an effective wavelength for water disinfection.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6758387
dc.rightsArchived with thanks to IEEE Photonics Journal
dc.titleEnhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalIEEE Photonics Journal
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKing Abdulaziz City for Science and Technology
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personOoi, Boon S.
kaust.personJanjua, Bilal
kaust.personNg, Tien Khee
refterms.dateFOA2018-06-13T14:27:18Z


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