Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes
dc.contributor.author | Janjua, Bilal | |
dc.contributor.author | Alyamani, Ahmed Y. | |
dc.contributor.author | El-Desouki, M. M. | |
dc.contributor.author | Ng, Tien Khee | |
dc.contributor.author | Ooi, Boon S. | |
dc.date.accessioned | 2014-04-19T18:04:06Z | |
dc.date.available | 2014-04-19T18:04:06Z | |
dc.date.issued | 2014-04 | |
dc.identifier.citation | Janjua B, Ng TK, Alyamani AY, El-Desouki MM, Ooi BS (2014) Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes. IEEE Photonics Journal 6: 1-9. doi:10.1109/JPHOT.2014.2310199. | |
dc.identifier.issn | 1943-0655 | |
dc.identifier.doi | 10.1109/JPHOT.2014.2310199 | |
dc.identifier.uri | http://hdl.handle.net/10754/316028 | |
dc.description.abstract | We study the enhanced hole confinement by having a large bandgap AlGaN monolayer insertion (MLI) between the quantum well (QW) and the quantum barrier (QB). The numerical analysis examines the energy band alignment diagrams, using a self-consistent 6 × 6 k ·p method and, considering carrier distribution, recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates), under equilibrium and forward bias conditions. The active region is based on AlaGa1-aN (barrier)/AlbGa1-bN (MLI)/AlcGa1-cN (well)/AldGa1-dN (barrier), where b > d > a > c. A large bandgap AlbGa1-bN mono layer, inserted between the QW and QB, was found to be effective in providing stronger hole confinement. With the proposed band engineering scheme, an increase of more than 30% in spatial overlap of carrier wavefunction was obtained, with a considerable increase in carrier density and direct radiative recombination rates. The single-QW-based UV-LED was designed to emit at 280 nm, which is an effective wavelength for water disinfection. | |
dc.language.iso | en | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.relation.url | http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6758387 | |
dc.rights | Archived with thanks to IEEE Photonics Journal | |
dc.title | Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes | |
dc.type | Article | |
dc.contributor.department | Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division | |
dc.contributor.department | Electrical Engineering Program | |
dc.contributor.department | Photonics Laboratory | |
dc.identifier.journal | IEEE Photonics Journal | |
dc.eprint.version | Publisher's Version/PDF | |
dc.contributor.institution | King Abdulaziz City for Science and Technology | |
dc.contributor.affiliation | King Abdullah University of Science and Technology (KAUST) | |
kaust.person | Ooi, Boon S. | |
kaust.person | Janjua, Bilal | |
kaust.person | Ng, Tien Khee | |
refterms.dateFOA | 2018-06-13T14:27:18Z |
Files in this item
This item appears in the following Collection(s)
-
Articles
-
Electrical and Computer Engineering Program
For more information visit: https://cemse.kaust.edu.sa/ece -
Photonics Laboratory
For more information visit: <a href=https://photonics.kaust.edu.sa/Pages/Home.aspx">https://photonics.kaust.edu.sa/Pages/Home.aspx</a> -
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
For more information visit: https://cemse.kaust.edu.sa/