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    Hole doped Dirac states in silicene by biaxial tensile strain

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    Hole doped Dirac states in silicene by biaxial tensile strain.pdf
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    Type
    Article
    Authors
    Kaloni, Thaneshwor P.
    Cheng, Yingchun cc
    Schwingenschlögl, Udo cc
    KAUST Department
    Computational Physics and Materials Science (CPMS)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2013-03-11
    Preprint Posting Date
    2013-10-28
    Online Publication Date
    2013-03-11
    Print Publication Date
    2013-03-14
    Permanent link to this record
    http://hdl.handle.net/10754/315802
    
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    Abstract
    The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doped Dirac states because of weakened Si–Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.
    Citation
    Kaloni TP, Cheng YC, Schwingenschlögl U (2013) Hole doped Dirac states in silicene by biaxial tensile strain. Journal of Applied Physics 113: 104305. doi:10.1063/1.4794812.
    Publisher
    AIP Publishing
    Journal
    Journal of Applied Physics
    DOI
    10.1063/1.4794812
    arXiv
    1310.7411
    Additional Links
    http://scitation.aip.org/content/aip/journal/jap/113/10/10.1063/1.4794812
    http://arxiv.org/abs/1310.7411
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4794812
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

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