Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions
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Impact of lattice strain on the tunnel magnetoresistance in Fe insulator Fe and Fe insulator La0.67Sr0.33MnO3 magnetic tunnel junctions.pdf
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ArticleKAUST Department
Computational Physics and Materials Science (CPMS)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2013-08-19Permanent link to this record
http://hdl.handle.net/10754/315801
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The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.Citation
Useinov A, Saeed Y, Singh N, Useinov N, Schwingenschlögl U (2013) Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions. Phys Rev B 88. doi:10.1103/PhysRevB.88.060405.Publisher
American Physical Society (APS)Journal
Physical Review BarXiv
1311.3410Additional Links
http://link.aps.org/doi/10.1103/PhysRevB.88.060405ae974a485f413a2113503eed53cd6c53
10.1103/PhysRevB.88.060405