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dc.contributor.authorJutong, Nuttachai
dc.contributor.authorEckern, Ulrich
dc.contributor.authorRungger, Ivan
dc.contributor.authorSanvito, Stefano
dc.contributor.authorSchuster, Cosima
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2014-04-13T13:12:37Z
dc.date.available2014-04-13T13:12:37Z
dc.date.issued2012-11-12
dc.identifier.citationJutong N, Rungger I, Schuster C, Eckern U, Sanvito S, et al. (2012) Electronic transport through EuO spin-filter tunnel junctions. Phys Rev B 86. doi:10.1103/PhysRevB.86.205310.
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.doi10.1103/PhysRevB.86.205310
dc.identifier.urihttp://hdl.handle.net/10754/315788
dc.description.abstractEpitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.86.205310
dc.relation.urlhttp://arxiv.org/abs/1207.2061
dc.rightsArchived with thanks to Physical Review B
dc.titleElectronic transport through EuO spin-filter tunnel junctions
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitut für Physik, Universität Augsburg, 86135 Augsburg, Germany
dc.contributor.institutionSchool of Physics and CRANN, Trinity College, Dublin 2, Ireland
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.identifier.arxivid1207.2061
kaust.personSchwingenschlögl, Udo
dc.versionv1
refterms.dateFOA2018-06-14T04:01:11Z
dc.date.posted2012-07-09


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